Resumo Diversos aspectos da troca de sexo em peixes recifais vem sendo estudados, incluindo comportamentos e organização social. Entretanto, a histologia das gônadas continua sendo a maneira mais robusta para se identificar padrões sexuais em peixes. Alguns tecidos incomuns, tais como as estruturas anexas a gônada encontradas em espécies da família Gobiidae e raras em outras espécies são pouco estudados. Este trabalho é a primeira descrição da glândula testicular em Gramma brasiliensis e para a família Grammatidae. Entre abril de 2011 e fevereiro de 2012, oitenta espécimes foram coletados durante quatro amostragens no recife de Taipus de Fora (13°56’20”S 38°55’32”W), Bahia, Brasil, e tiveram seus sexos determinados. Treze por cento das fêmeas ativas e noventa por cento dos machos ativos apresentaram tecido da glândula testicular em suas gônadas. Esta descoberta levou ao estudo da características dessa estrutura e sua relação com a maturação gonadal. Foram identificados três padrões de desenvolvimento da glândula testicular nas gônadas do Gramma brasiliensis. Tanto as gônadas produtoras de espermatozoides quanto as de oócitos apresentaram tecido da glândula testicular, e o surgimento desse tecido parece ser a primeira modificação gonadal do início da troca de sexo protogínica em G. brasiliensis.

Abstract Many aspects of sex change in reef fishes have been studied, including behavior and social organization. However, gonad histology remains the most robust way to identify sexual patterns in fishes. Some uncommon tissues remain poorly described, such as the accessory gonadal structures found in species from the Gobiidae family, which are rare in other bony fishes. This is the first report of the testicular gland in Gramma brasiliensis and for the Grammatidae family. Between April 2011 and February 2012 eighty specimens were collected during four dive campaigns on the Taipus de Fora reef (13°56’20”S 38°55’32”W), Bahia, Northeast Brazil, and their sex was determined. Thirteen per cent of the active-females and 90% of the active-males had testicular gland tissue in their ovotestis. This discovery led to additional research into the characteristics of the gland tissue and its relationship with gonadal maturation. Three patterns of testicular gland development were found in Brazilian basslet ovotestis. Both ova and sperm-producing gonad contained testicular gland tissue, and the appearance of this tissue seems to be the first modification of ovotestis tissue marking the beginning of the protogynous sex-change process in G. brasiliensis.

In this work, by using the density-functional theory within the local density approximation, plane wave expansions and the pseudopotential method, we present our preliminary results for the strain-induced shifts of the zone center phonon modes and of the effective charges on the III-Nitrides. Our results are in good agreement with the experiment as well as with other calculations, whenever a comparison is possible.

The electronic, structural, and thermodynamic properties of cubic (zinc blende) group-III nitride ternary In xGa1-xN and quaternary Al xIn yGa1-x-yN alloys are investigated by combining first-principles total energy calculations and cluster expansion methods. External biaxial strain on the alloys are taken into account in the calculations. While alloy fluctuations and strain effects play a minor role in the physical properties of AlGaN, due to the small lattice-mismatch, in the InGaN alloys we found a remarkable influence of strain on the phase separation. The effect of biaxial strain on the formation of ordered phases has been also investigated, and the results are used to clarify the origin of the light emission process in In xGa1-xN based optoelectronic devices. The dependence of the lattice constant and energy bandgap in quaternary Al xIn yGa1-x-yN alloys was obtained as function of the compositions x and y. PACS: 61.66.Dk, 64.75.+g, 71.20.Nr

The utilization of the quantum properties of the electron spin wave function will allow the development of a new class of devices. The problem is still controversial and unsettled, even qualitatively, especially for concentrated spin systems such as 3d metals and their alloys. The variety of crystal structures of 3d metals makes difficult the direct comparison between the experimental results and the theoretical conclusions. On the account of this difficulty, substitutional alloys with the same crystal structure, especially face-centered cubic alloys, have been investigated extensively. In this work the properties of diluted Ga1-xMn xN (x = 0.0630; 0.0315) alloys are calculated in the zinc-blende phase, within the framework of the density functional theory, using the fullpotential linearized augmented plane wave (FLAPW) method and the local density approximation (LDA). The alloys are simulated using 32-atom and 64-atom large unit cells, containing one substitutional Mn atom for a Ga atom. The calculations are spin-polarized and we analyze band structures, density of states and total magnetizations. A half-metallic state is predicted at a0 ~ 4:45Å. The majority-spin band has a rather sharp peak, characteristic of a narrow band, while the minority-spin has a gap. The total magnetization of the cell is 4.00muB which does not change with the Mn concentration. The valence band is ferromagnetically coupled with the Mn atoms, and the spin splitting is not linearly dependent on the Mn concentration.

We calculated the classical electron dynamics of three-dimensional electrons in a billiard system in tilted magnetic field and analyzed the evolution of trajectories in phase space by means of Poincaré space of sections. The low field magnetoresistance rhoxx was calculated through linear response theory and found that nonlinear resonances between the cyclotron radius Rc, the antidot lattice period a, and the well width W, are reflected in the observed magnetoresistance peaks.

We report ab-initio all electrons density- functional calculations for the electronic structure of the compounds MnAs and MnN, in the zinc-blende phase. They are potential materials for use in fabrication of new functional semiconductors taking advantage of the spin degree of freedom. The aim is the establishing of the semiconductor spin electronics (spintronics) as a practical technology [H. Ohno, Semiconductor Science and Technology 17, 4 (2002).]. We compare results obtained using the theoretical approaches LDA (Local Density Approximation) and GGA (Generalized Gradient Approximation). The calculations are spin-polarized and we follow the evolution of the band structures as a function of lattice parameter. We compare also the evolution of the density of states of the majority-spins and of the minority-spins. We conclude that, depending on the lattice parameter, both materials may be half-metallic, therefore showing conduction by charge carriers of one spin direction exclusively: the majority- spin band is continuous, while the minority-spin has a gap. Both materials reach a total magnetization of the order of 4 mB. MnN changes from paramagnetic to ferromagnetic with the increase of the lattice parameter.

In this work, we have calculated ab initio the phonon dynamics of the Ga-rich GaAs (100) (1 × 1), GaAs (100) (2 × 1), GaN (100) (1 × 1), GaAs (110) and GaN (110) surfaces. Our results for the (100) surfaces show that, while the (2 × 1) reconstruction is characterized by dimer vibrations, the (1 × 1) reconstruction presents interesting features which is closely related to the reduced mass of the compound. All the studied cases show the presence of a Rayleigh mode. The calculated properties for the (110) surfaces agree very well with the available experimental data from HEELS and inelastic He-atom scattering as well as with other theoretical calculations.

Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary Al xGa1-xAs alloy in the temperature range from 2 to 300 K. The effect of the thermal expansion contribution on the temperature dependence of excitonic transitions for different aluminum concentrations in the Al xGa1-xAs alloy is presented. Results from this study have shown that the negative thermal expansion (NTE) in the Al xGa1-xAs alloy, in the low temperature interval, induces a small blueshift in the optical transition energy. In the temperature range from ~23 to ~95 K there is a competition between the NTE effect and the electron-phonon interaction. Using the thermal expansion coefficient in the 2 - 300 K temperature range, the thermal expansion contribution to GaAs, at room temperature, represents 21% of the total shift of the excitonic transition energy. After subtracting the thermal expansion contribution from the experimental temperature dependence of the excitonic transitions, in the Al xGa1-xAs alloy, the contribution to the electron-phonon interaction of the longitudinal optical phonon increases, relatively to the longitudinal acoustical phonon, with increasing Al concentration.

First-principles calculations of electronic band structures of the ordered cubic alloys Al xGa1-xN and Cd xZn1-xTe are carried out. The band structures are used to provide e ective masses and Luttinger parameters which are useful in the parametrization of theories based on e ective hamiltonians.

Using the density-functional theory within the Full Potential Linear Augmented Plane-Wave (FP-LAPW) method, we have calculated, in this work, the equation of state, the effective charges and the phonon dispersion along [100] and [111] directions for the cubic III-Nitrides(c-BN, c-AlN, c-GaN and c-InN), including hydrostatic strains dependence. A good agreement with the micro-Raman scattering experiment is obtained for the phonon modes at <FONT FACE=Symbol>G.</FONT> Our results show that, for c-InN case, the apparent discrepancy between the known experimental results is a consequence of hydrostatic effects on the sample due to differences of the used Raman methods.

In this work, using Density Functional, Hartree-Fock and Extended Hückel Theories together with the supercell and cluster model approaches, we present our preliminary results for the simulation of the adsorption of Si and C atoms over the (111) SiC surfaces as well as the torsion of SiC molecules at that surfaces. Our results shown that, before and after the adsorption, the cubic structure are the most stable one, when compared with the hexagonal ones. However, the torsional energy barrier between the cubic and the hexagonal structures is small enough that, at the conditions of SiC growth, it facilitates the SiC polytype formation.

A theoretical semi-classical method to calculate the modulated field profile in a semiconductor is presented. The behavior of quasi-Fermi levels and chemical potentials for the majority and minority carriers is investigated. Systematic studies of the non-thermodynamic equilibrium electric potential profile as a function of the modulation light intensity are performed.

We present a systematic theoretical study of several III-nitride (110) surfaces based on accurate, parameter-free, self-consistent total energy and force calculations using the density functional theory, the generalized gradient approximation(GGA) for the exchange-correlation term, and the Full Potential Linear Augmented Plane Wave (FPLAPW) approach associated with the slab supercell model. We studied AlN, BN, GaN and InN and analyzed the theoretical trends for the equilibrium atomic structures and surface band structures. We used supercells built up of 7 atomic layers and a vacuum region equivalent of 5 atomic layers. For the Ga and In species, the 3d and 4d electrons were treated properly as valence electrons. In connection with the atomic structures, we are concerned with the LEED parameters delta1<FONT FACE=Symbol>^</FONT>, delta1x, delta2<FONT FACE=Symbol>^</FONT> , d12<FONT FACE=Symbol>^</FONT>, d12x and omega for the (110) surface. We analyzed the changes in the bond-lengths and in the bond-angles at the anion and cation sites. We conclude that similarly to the III-arsenide (110) and III-phosphide (110) surfaces, the III-nitride (110) surfaces relax such that the cation-surface atom moves inward and the N-surface atom moves outward. The large Coulomb energy of the III-nitrides as compared with the other III-V compounds re ects in the smaller value of the tilt angle omega and in the small value of delta1<FONT FACE=Symbol>^</FONT>. To our knowledge, this is the rst time the FPLAPW method is used for such a systematic study of III-nitrides, and we compare our results with recent results obtained with other approaches as reported in the literature.